服务器硬件架构供应商专注服务器硬件销售及各种存储的定制化服务
产品介绍
Power Supply: VDD=1.2V (1.14V to 1.26V)
VDDQ = 1.2V (1.14V to 1.26V)
VPP - 2.5V (2.375V to 2.75V)
VDDSPD=2.25V to 2.75V
Functionality and operations comply with the DDR4 SDRAM datasheet
16 internal banks
Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
Data transfer rates: PC4-2666, PC4-2400, PC4-2133
Bi-Directional Differential Data Strobe
8 bit pre-fetch
Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
Supports ECC error correction and detection
On-Die Termination (ODT)
Temperature sensor with integrated SPD
This product is in compliance with the RoHS directive.
Per DRAM Addressability is supported
Internal Vref DQ level generation is available
Write CRC is supported at all speed grades
DBI (Data Bus Inversion) is supported(x8)
CA parity (Command/Address Parity) mode is supported
